Hostname: page-component-54dcc4c588-br6xx Total loading time: 0 Render date: 2025-09-21T06:31:49.537Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Density of States Model for Amorphous Silicon and Alloys

Published online by Cambridge University Press:  21 February 2011

R. A. Street
R. A. Street*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Get access

Abstract

It is proposed that hydrogen reactions near the growing surface control the structure of plasma-deposited amorphous silicon and its alloys. The model explains how the plasma influences the dangling bond density and silicon weak bond distribution, which are the main parameters influencing the electronic properties. The hydrogen interactions account for the dependence of the electronic structure on growth conditions, the transition to microcrystalline growth in hydrogen-rich plasmas, and the different electronic properties of a-Si:H alloys. The proposed growth mechanisms are closely related to the metastability phenomena which occur in bulk a-Si:H films.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 253
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Gallagher, A. and Scott, J., Solar Cells, 21, 147 (1987).Google Scholar
2. Carlson, D. E. and Magee, C. W., Appl. Phys. Lett. 33, 81 (1978).Google Scholar
3. Street, R.A., Solar Cells, 24, 211 (1988).CrossRefGoogle Scholar
4. Street, R. A. and Winer, K., Phys. Rev. B 40, 6236 (1989).Google Scholar
5. Street, R.A., Solar cells in press.Google Scholar
6. Street, R. A., Phys. Rev. B43, 2454 (1991).Google Scholar
7. Johnson, N. M., Nebel, C. E., Santos, P. V., Jackson, W. B., Street, R. A., Stevens, K. S. and Walker, J., submitted fror publication.Google Scholar
8. Matsuda, A., J. Non-cryst. solids, 59&60, 767 (1983).Google Scholar
9. Street, R. A., submitted for publication.Google Scholar
10. Bullot, J. and Schmidt, M. P., Phys. Stat. Sol. (b) 143, 345 (1987).CrossRefGoogle Scholar
11. Weller, H. C., Paasche, S. M., Nebel, C. E., Kessler, F. and Bauer, G. H., Proc. 19th IEEE Photvoltaic Specialists Conf. (New Orleans), 872 (1987);Google Scholar
Guha, S., Payson, J. S., Agarwal, S. C. and Ovshinsky, S. R., J. Non-cryst. Solids, 97&98, 1455 (1987).Google Scholar