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High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC

Published online by Cambridge University Press:  10 February 2011

C.-M. Zetterling ,
M. östling ,
L. Norin  and
U. Jansson
C.-M. Zetterling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, Box 229, S-164 40 Kista, Sweden
M. östling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, Box 229, S-164 40 Kista, Sweden
L. Norin
Affiliation:
Uppsala University, Ångström Laboratory, Dept. of Inorganic Chemistry, Uppsala, Sweden
U. Jansson
Affiliation:
Uppsala University, Ångström Laboratory, Dept. of Inorganic Chemistry, Uppsala, Sweden
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Abstract

Epitaxial titanium carbide is investigated as a low resistivity, high temperature stable Ohmic and Schottky contact to 4H and 6H SiC. The titanium carbide films were deposited at 500°C using co-evaporation of titanium (e-beam) and C60 (Knudsen cell) in a UHV system. Schottky diodes and TLM structures were fabricated on low and high doped SiC material respectively. The samples were annealed at 700 °C in a vacuum furnace, and electrical measurements were performed up to 300 °C.

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