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High Resolution Electron Microscopy of ∑ =3 NiSi2 (111)(115) Si And NiSi2(221)/(001)Si Interfaces

Published online by Cambridge University Press:  15 February 2011

Wen-Jauh Chen  and
Fu-Rong Chen
Wen-Jauh Chen
Affiliation:
Department of Mechanical Materials Engineering, National Yun-Lin Institute of Technology, Yun-Lin, Taiwan, R.O.C.
Fu-Rong Chen
Affiliation:
HRTEM LAB, Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, R.O.C.
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Abstract

High resolution imaging technique is applied to systematically study the ∑ =3 NiSi2(111)/(115)Si and NiSi2(221)/(001)Si interfaces. The long-period boundaries of ∑ =3 NiSi2 (111)/(115)Si and NiSi2(221)/(001)Si have been shown to decompose into short period of symmetrical NiSi2 (111)/(111)Si and NiSi2 (112)/(112)Si atomic facets which are similar to the case of asymmetrical twin boundaries in NiSi2 crystal. This result is consistent with the computer simulation in grain boundary case that asymmetrical tilt boundaries which are generally of longer periods may facet on an atomic scale into short period symmetrical boundaries.

The domain-related atomic faceting interfaces have been found in both of.∑ =3 NiSi2(111)/(115)Si and NiSi2(221)/(001)Si interfaces. The coexistence of two domain-related atomic faceting interfaces in the ∑ =3 NiSi2(111)/(115)Si has also been observed in different area of an interface which are separated by a 1/4<111> type of dislocation associated with a ‘demi-step’. The Burgers vector and step of a dislocation required to separate two domain structures in the ∑ =3 NiSi2/Si interface can be derived from the CCSL model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 295: Symposium W – Atomic-Scale Imaging of Surfaces and Interfaces , 1992 , 167
Copyright
Copyright © Materials Research Society 1993

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