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High Performance A–Si Solar Cells and Narrow Bandgap Materials

Published online by Cambridge University Press:  28 February 2011

Shoichi Nakano ,
Yasuo Kishi ,
Michitoshi Ohnishi ,
Shinya Tsuda ,
Hisashi Shibuya ,
Noboru Nakamura ,
Yoshihiro Hishikawa ,
Hisaki Tarui ,
Tsuyoshi Takahama  and
Yukinori Kuwano
Shoichi Nakano
Affiliation:
Research Center, SANYO Electric Co., Ltd. Hashiridani, Hirakata City, Osaka, Japan
Yasuo Kishi
Affiliation:
Applied Research Center, SANYO Electric Co., Ltd. Moriguchi City, Osaka, Japan
Michitoshi Ohnishi
Affiliation:
Research Center, SANYO Electric Co., Ltd. Hashiridani, Hirakata City, Osaka, Japan
Shinya Tsuda
Affiliation:
Research Center, SANYO Electric Co., Ltd. Hashiridani, Hirakata City, Osaka, Japan
Hisashi Shibuya
Affiliation:
Applied Research Center, SANYO Electric Co., Ltd. Moriguchi City, Osaka, Japan
Noboru Nakamura
Affiliation:
Research Center, SANYO Electric Co., Ltd. Hashiridani, Hirakata City, Osaka, Japan
Yoshihiro Hishikawa
Affiliation:
Research Center, SANYO Electric Co., Ltd. Hashiridani, Hirakata City, Osaka, Japan
Hisaki Tarui
Affiliation:
Research Center, SANYO Electric Co., Ltd. Hashiridani, Hirakata City, Osaka, Japan
Tsuyoshi Takahama
Affiliation:
Research Center, SANYO Electric Co., Ltd. Hashiridani, Hirakata City, Osaka, Japan
Yukinori Kuwano
Affiliation:
Research Center, SANYO Electric Co., Ltd. Hashiridani, Hirakata City, Osaka, Japan
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Abstract

High performance a-Si solar cells were developed. A conversion efficiency of 11.5% was achieved for a textured TCO/p-SiC/in/Ag structure with a size of 1 cm2 using the high quality i-layer fabricated by a new consecutive, separated reaction chamber apparatus. A conversion efficiency of 9.0% was obtained with a size of 10cm × 10cm. A high quality a-SiGe:H:F, which is a new narrow bandgap material for a-Si solar cells, was fabricated by a glow discharge decomposition of SiF4 + GeF4 + H2.

A photo-CVD method was investigated in order to improve the interface properties of a–Si solar cells. A conversion efficiency of 11.0% was obtained with a solar cell in which the p-layer is fabricated by the photo-CVD method. a-SiGe:H films were fabricated by the photo-CVD method for the first time as a narrow bandgap material for multi-bandgap a-Si solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 275
Copyright
Copyright © Materials Research Society 1985

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References

[1] Kuwano, Y.:Technical Digest of the Int' I PVSEC–1 (1984)13 Google Scholar
[2] Hamakawa, Y.:17th IEEE Photovoltaic Specialists Conf. (1984) 63 Google Scholar
[3] Oda, S. et al.:Technical Digest of the Int' I PVSEC–1 (1984) 429 Google Scholar
[4] Chevallier, J. et al.:Solid State Commun. 24 (1977) 867 Google Scholar