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He-Dilution to Increase Deposition Rate and Feedstock Utilization During the Growth of a-Si:H and a-SiGe:H Alloys

Published online by Cambridge University Press:  15 February 2011

A. R. Middya ,
G. Wood ,
G. H. Lin  and
D. E. Carlson
A. R. Middya
Affiliation:
Solarex, A Business Unit of BPAmoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
G. Wood
Affiliation:
Solarex, A Business Unit of BPAmoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
G. H. Lin
Affiliation:
Solarex, A Business Unit of BPAmoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
D. E. Carlson
Affiliation:
Solarex, A Business Unit of BPAmoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
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Abstract

We report on the development of helium diluted a-Si:H and a-SiGe:H solar cells with higher deposition rates and better feedstock utilization than devices made with hydrogen dilution. Both the initial and the stabilized efficiencies of the He-diluted single-junction aSi:H and a-SiGe:H cells are similar to those of hydrogen-diluted cells with state-of-the-art intrinsic materials. The total fabrication time for tandem cells has been reduced by 17% by using helium dilution without loss in initial and stabilized efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 151
Copyright
Copyright © Materials Research Society 1999

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References

1. Cabarrocas, P. Roca i, J. Non-Cryst. Solids 164–166, 37 (1993).Google Scholar
2. Middya, A. R., Hazra, Sukti and Ray, Swati, J. Appl. Phys. 76, 7578 (1994).Google Scholar
3. Perrin, J., Plasma Deposition of Amorphous-based Materials edited by Bruno, G., Capezzuto, P. and Madan, A. (Academic Press, 1995)p.216.Google Scholar
4. Middya, A. R., Hazra, S., Ray, S., Barua, A. K. and Longeaud, C., J. Non-Cryst. Solids, 198–200, 1067 (1996).Google Scholar
5. Middya, A. R., Hazra, Sukti., Ray, Swati., Longeaud, C. and Kleider, J. P. in Amorphous and Microcrystalline Silicon Technology-1997 edited by Wagner, S., Hack, M., Schiff, E. A., Schropp, R. and Shimizu, I. (Mater. Res. Soc. Proc. 467, Pittsburg, PA, 1997)p.615.Google Scholar
6. Middya, A. R., Hazra, S., Ray, S., Longeaud, C. and Kleider, J. P., Conference Record of The Twenty Sixth IEEE Photovoltaic Specialist Conference- 1997 (Conf. Rec. 26th IEEE PVSC, Anaheim, CA, 1997)p.655.Google Scholar
7. Cabarrocas, P. Roca i, St'ahel, P., Hamma, S. and Poissant, Y., in Conference Record of The Twenty Sixth IEEE Photovoltaic Specialist Conference- 1998 (Conf. Rec. 27th IEEE PVSC, Vienna, Austria, 1998) (In press).Google Scholar
8. Longeaud, C., Kleider, J. P., Gauthier, M., Kaplan, R., Butte, R., Meaudre, R. and Cabarrocas, P. Roca i, in Conference Record of The Twenty Sixth IEEE Photovoltaic Specialist Conference- 1998 (Conf. Rec. 27th IEEE PVSC, Vienna, Austria, 1998) (In press).Google Scholar
9. Nomura, H., Kono, A. and Goto, T., Jpn. J. Appl. Phys. 33, 4165 (1994).Google Scholar
10. Perrin, J., J. Non-Cryst. Solids 137&138, 639(1991).Google Scholar
11. Shirai, H., Ariyoshi, T., Hanna, J. and Shimizu, I., J. Non-Cryst. Solids 137&138, 693(1991).Google Scholar
12. Futako, W., Fukutani, K., Kannbe, M., Kamiya, T., Fortmann, C. M. and Shimizu, I. Conference Record of The Twenty Sixth IEEE Photovoltaic Specialist Conference- 1997 (Conf. Rec. 26th IEEE PVSC, Anaheim, CA, 1997).Google Scholar