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Growth of Rhombohedral B12P2 Thin Films on 6H-SiC(0001) By Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Peng Lu ,
J. H. Edgar ,
J. Pomeroy ,
M. Kuball ,
H. M. Meyer  and
T. Aselage
Peng Lu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS-66506, USA.
J. H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS-66506, USA.
J. Pomeroy
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
M. Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
H. M. Meyer
Affiliation:
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6062, USA
T. Aselage
Affiliation:
Department 2525/MS0613, Sandia National Laboratories, Albuquerque, NM - 87185 -06513, USA.
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Abstract

The parameters necessary to deposit oriented rhombohedral boron phosphide (B12P2) thin films on on-axis Si-face 6H-SiC(0001) substrates by chemical vapor deposition are reported. Ultra high purity BBr3 and PBr3 were used as reactants, with hydrogen as the carrier gas. The BBr3 to PBr3 flow rate ratio was adjusted to obtain good surface morphology of the B12P2 films. BBr3 to PBr3 ratios in the range of 1 to 1.5 produced smooth surfaces and moderate growth rates of 10μm/hr. Higher growth rates were obtained by increasing the BBr3 flow rate, but the surfaces became very rough. The c-axis of the B12P2 film was aligned with the c -axis of the substrate at temperatures between 1650°C-1700°C. The surface morphologies were investigated by SEM and the crystalline properties of the films were characterized by XRD and Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z2.10
Copyright
Copyright © Materials Research Society 2004

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References

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