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Growth of c-GaN Films on the Nitridated β-Ga2O3 Substrates Using RF-MBE

Published online by Cambridge University Press:  01 February 2011

Tsutomu Araki ,
Chiharu Morioka ,
Junichi Wada ,
Keisuke Fujiwara ,
Hiroshi Minami ,
Yasushi Nanishi ,
Shigeo Ohira ,
Norihito Suzuki  and
Toetsu Shishido
Tsutomu Araki
Affiliation:
tara@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-higashi, Kusatsu, Shiga, 5258577, Japan, +81-77-561-5030, +81-77-561-3994
Chiharu Morioka
Affiliation:
re015990@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Junichi Wada
Affiliation:
re017997@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Keisuke Fujiwara
Affiliation:
ro008003@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Hiroshi Minami
Affiliation:
ro013011@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Yasushi Nanishi
Affiliation:
nanishi@se.ritsumei.ac.jp, Ritsumeikan Univ., Dept. of Photonics, Japan
Shigeo Ohira
Affiliation:
shigeo-ohira@nikkeikin.co.jp, Nippon Light Metal Co. Ltd., Japan
Norihito Suzuki
Affiliation:
norihito-suzuki@nikkeikin.co.jp, Nippon Light Metal Co. Ltd., Japan
Toetsu Shishido
Affiliation:
tara@se.ritsumei.ac.jp, Tohoku University, Institute for Materials Research, Japan
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Abstract

Cubic GaN is successfully grown on β-Ga2O3 by molecular beam epitaxy for the first time. Prior nitridation of the (100) β-Ga2O3 single-crystal substrate by exposure to electron cyclotron resonance nitrogen plasma causes the formation of a surficial (001) c-GaN layer, upon which homo-epitaxial growth of c-GaN can be achieved by radio-frequency molecular beam epitaxy. The epitaxial relationship is confirmed by electron microscopy to be (001) c-GaN // (100) β-Ga2O3, [110] c-GaN // [010] β-Ga2O3, and [1-10] c-GaN // [001] β-Ga2O3.

Keywords

nitrideepitaxymicrostructure

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF28-06
Copyright
Copyright © Materials Research Society 2006

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References

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