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Growth and Nitridation of Silicon-Dioxide Films on Silicon-Carbide

Published online by Cambridge University Press:  10 February 2011

Denis Sweatman ,
Sima Dimitrijev ,
Hui-Feng Li ,
Philip Tanner  and
H. Barry Harrison
Denis Sweatman
Affiliation:
School of Microelectronic Engineering, Griffith University, Australia.
Sima Dimitrijev
Affiliation:
School of Microelectronic Engineering, Griffith University, Australia.
Hui-Feng Li
Affiliation:
School of Microelectronic Engineering, Griffith University, Australia.
Philip Tanner
Affiliation:
School of Microelectronic Engineering, Griffith University, Australia.
H. Barry Harrison
Affiliation:
School of Microelectronic Engineering, Griffith University, Australia.
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Abstract

Silicon-carbide offers great potential as a wide bandgap semiconductor for electronic applications. A good quality oxide dielectric will allow MOS device fabrication and in particular N-channel mosfets for their higher electron mobility. To date oxides on N-type silicon-carbide (nitrogen doped) have exhibited excellent characteristics while on P-type (aluminium or boron doped) the characteristics are poor. This paper presents results for the oxidation and subsequent nitridation of N and P-type silicon-carbide. It illustrates the role that nitrogen at the interface has in improving the trap densities and that nitric oxide provides the nitrogen well. Nitrous oxide, previously used to nitride silicon dioxide on silicon, is shown to substantially deteriorate the interface density of states for both N and P-type substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 413
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Alok, D., McLarty, P.K. and Baliga, B. J.. Appl. Phys. Lett. 65, 2177 (1994).Google Scholar
2. Shenoy, J.N., Chindalore, G.L., Melloch, M.R., Cooper, J.A. Jr, Palmour, J.W. and Irvine, K.G.. J. Electronic Materials 24, 303 (1995).Google Scholar
3. Sridevan, S., McLarty, P.K. and Baliga, B.J.. IEEE Electron Device Lett. 17, 136 (1996).Google Scholar
4. Li, H.-F., Dimitrijev, S., Harrison, H.B. and Sweatman, D.. Appl. Phys. Lett. 70, 2028 (1997).Google Scholar
5. Dimitrijev, S., Li, H.-F., Harrison, H.B. and Sweatman, D. IEEE Electron Device Lett. 18 (1997) to be published.Google Scholar
6. Yao, Z.-Q., Harrison, H.B., Dimitrijev, S., Yeow, Y.-T.. IEEE Electron Device Lett. 16, 345 (1995).Google Scholar
7. Palmour, J.W., Davis, R.F., Kong, H.S., Corcoran, S.P. and Griffis, D.P.. J. Electrochem Soc 136, 502 (1989).Google Scholar
8. Liu, Z., Wann, H.-J., Ko, P.K., Hu, C. and Cheng, Y.C.. IEEE Electron Device Lett. 13, 402 (1992).Google Scholar
9. Tobin, P.J., Okada, Y., Ajuria, S.A., Lakhotia, V., Feil, W.A. and Hedge, R.I.. J. Appl. Phys. 75, 1811 (1994).Google Scholar
10. DeMeo, R.C., Wang, T.K., Chow, J.P., Brown, D.M. and Matus, L.G.. J. Electrochem Soc. 141, L150 (1994).Google Scholar
11. Fleetwood, D.M., Winokur, P.S., Reber, R.A. Jr, Meisenheimer, T.X., Schwank, J.R., Shaneyfelt, M.R. and Riewe, L.C.. J. Appl. Phys. 73, 5058 (1993).Google Scholar
12. Tanner, P., Dimitrijev, S. and Harrison, H.B.. Electron Lett. 31, 1880 (1995).Google Scholar