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Frequency-Dependent Noise in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

F. Z. Bathaei  and
J. C. Anderson
F. Z. Bathaei
Affiliation:
Department of Electrical Engineering, Imperial College, London SW7 2BT, U.K.
J. C. Anderson
Affiliation:
Department of Electrical Engineering, Imperial College, London SW7 2BT, U.K.
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Abstract

Flicker noise, due to trapping and emission from states in the mobility gap, leads to a spectrum in which noise power is proportional to 1/fn. Experimentally we find 0.6 <n<1.1 for an Si:H film in an n+-i-n4 structure. Theoretical development allows the extended state electron mobility, and the density of states at the conduction band edge to be obtained. Similar measurements on Schottky diodes provide the distribution of the localized state density in the mobility gap.

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References

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