Hostname: page-component-669899f699-7tmb6 Total loading time: 0 Render date: 2025-04-26T20:04:34.575Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Shallow Energy Levels in Mn+ Implanted GaAs with Extremely Low Background Impurity Concentration

Published online by Cambridge University Press:  22 February 2011

Honglie Shen ,
Yunosuke Makita ,
Akimasa Yamada ,
Shigeru Niki ,
Tsutomu Iida ,
Hajime Shibata ,
Paul Fons  and
Akira Obara
Yunosuke Makita
Affiliation:
Electrotcchnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Akimasa Yamada
Affiliation:
Electrotcchnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Shigeru Niki
Affiliation:
Electrotcchnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Tsutomu Iida
Affiliation:
Electrotcchnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Hajime Shibata
Affiliation:
Electrotcchnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Paul Fons
Affiliation:
Electrotcchnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Akira Obara
Affiliation:
Electrotcchnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

Manganese ions implantation into ultrapure GaAs layers grown by molecular beam epitaxy were investigated by photoluminescence technique systematically in a wide range of manganese concentration up to 1×1020cm-3. Five shallow emission bands denoted by (Mn°, X), “G”, “G' “ “H” and (D, A)2 are formed in the implanted layers in addition to the well known Mn impurity related emission at ~880nm. With increasing manganese concentration to 1×1019cm-3, “G” exhibits no energy shift, suggesting that “G” is different from the behavior of [g-g] emission that is commonly formed in shallow acceptor (such as C) incorporated ultrapure GaAs. (Mn°, X), “G” and “G' “ present no energy shift with increasing excitation intensity, while “H” and (D, A)2 indicate peak energy shift greatly showing typical donor-acceptor pair characteristics. “G” and (Mn°, X) are found to hold similar radiative origin which is different from “G”. Temperature dependence measurement reveals that emission “G” has a thermal activation energy of 5.4meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 343
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Eaves, L., Smith, A.W., Skolnick, M.S., and Cockayne, B., J. Appl. Phys. 53, 4955(1982).Google Scholar
2 Yu, P.W. and Park, Y.S., J. Appl. Phys. 50, 1097(1979).Google Scholar
3 Plot, B., Deveaud, B., Lambert, B., Chomette, A., Regreny, A., J. Phys. C.Solid State Phys. 19, 4279(1986).Google Scholar
4 Lee, T.C. and Anderson, W.W., Solid State Comm. 2, 264(1964).Google Scholar
5 Liegems, M., Dingle, R., and Rupp, L.W. Jr., J. Appl. Phys. 46, 3059(1975).Google Scholar
6 Niki, S., Makita, Y., Yamada, A., Iida, T., Obara, A., Tanoue, H., Kitahara, T.,Aoki, K., and Kutsuwada, N., Nuclearlnstruments and Methods in Physics Resarch B80/81, 691(1993).Google Scholar
7 Shibata, H., Makita, Y., Mori, M., Nakayama, Y., Takahashi, T., Yamada, A., Mayer, K.M., Onishi, N., and beye, A.C., Proceedings of GaAs and RelatedCompounds (Inst. Phys. Conf. Ser. No 106: Chapter 5, Karuizawa, 1989). pp.245–250.Google Scholar
8 Shigetomi, S., Makita, Y., Beye, A.C., Yamada, A., Ohnishi, N., and Matsumori, T., J. Appl. Phys. 69, 1613(1991).Google Scholar
9 Beye, A.C., Garcia, J.C., Neu, G., Contour, J.P., and Massies, J., Solid State Communications, 67, 1239(1988).Google Scholar
10 Ohnishi, N., Makita, Y., Mori, M., Irie, K., Takeuchi, Y., and Shigetomi, S., J. Appl. Phys. 62, 1833(1987).Google Scholar
11 Shen, H.L., Makita, Y., Niki, S., Yamada, A., Iida, T., Shibata, H., Obara, A.,Uekusa, S., Appl. Phys. Lett. 63, 1780(1993).Google Scholar
12 Shen, H.L., Makita, Y., Yoshinaga, H., Yamada, A., Niki, S., Iida, T., Shibata, H., Fons, P., Phollips, J.R., and Kobayashi, N., Proceedings of the 3rd IUMRS International Conference on Advanced Materials (Sunshine City, Tokyo, August 1993), (in press).Google Scholar
13 Shen, H.L., Makita, Y., Yamada, A., Shibata, H., Fons, P., to be published.Google Scholar
14 Yu, P.W., J. Appl. Phys. 48, 5043(1977).Google Scholar
15 Ruhle, W., Schmid, W., Meck, R., Stach, N., Fischbach, J.U., Strottner, I., Benz, K.W., and Pilkuhn, M., Phys. Rev. B 18, 7022(1978).Google Scholar