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Flux Dependent Generation Rates of Radiation-Induced Defect Clustering in n-Si Under 17 MeV Proton Irradiation

Published online by Cambridge University Press:  15 February 2011

K. Kono ,
H. Amekura  and
N. Kishimoto
K. Kono
Affiliation:
National Research Institute for Metals (NRIM)1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan, kono@nrim.go.jp
H. Amekura
Affiliation:
National Research Institute for Metals (NRIM)1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
N. Kishimoto
Affiliation:
National Research Institute for Metals (NRIM)1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
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Abstract

Proton flux and temperature dependent generation rates of radiation-induced defect clusters under 17 MeV proton irradiation have been studied by in-situ Deep Level Transient Spectroscopy (DLTS) measurement, to obtain information on clustering processes. The proton flux was ranged from 2.51×10up to 1.6×1012ions/cm2s with irradiation temperature 200 K or 300 K. Flux dependence is related to the ratio of impurity and primary defect concentrations created during irradiation. Change in temperature mainly modifies the diffusion constants of defects which determine the reaction rates. Rate equations of the defect reactions based on the Oerlein model [1] were solved numerically and compared to the experimental results. The numerical calculation successfully explained temperature and flux dependence except in the higher flux region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 115
Copyright
Copyright © Materials Research Society 1999

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