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Femtosecond Carrier Dynamics in Semiconductors and Metals

Published online by Cambridge University Press:  26 February 2011

Wei Zhu Lin ,
Robert W. Schoenlein ,
Stuart D. Brorson ,
Erich P. Ippen  and
James G. Fujimoto
Wei Zhu Lin
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
Robert W. Schoenlein
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
Stuart D. Brorson
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
Erich P. Ippen
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
James G. Fujimoto
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We describe investigations of carrier dynamics in GaAs and AlGaAs semiconductors and thin gold films using femtosecond optical techniques. Transient absorption saturation measurements in semiconductors permit an investigation of the fundamental scattering processes of optically excited carriers. Measurements of energy relaxation provide evidence for transient nonthermal carrier distributions. Studies in metals allow an investigation of nonequilibrium electron and phonon effects since the electrons are decoupled from the lattice on a femtosecond time scale. Nonequilbrium temperatures and energy transport in the electron gas have been observed.

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