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Fe-42%Ni austenitic alloy as a novel substrate for flexible electronics

Published online by Cambridge University Press:  31 March 2011

Xiaoxiao Ma ,
Shahrukh A. Khan ,
Nackbong Choi ,
Miltiadis Hatalis  and
Mark Robinson
Xiaoxiao Ma
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Shahrukh A. Khan
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Nackbong Choi
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Miltiadis Hatalis
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
Mark Robinson
Affiliation:
Department of Electrical Engineering, Lehigh University, Bethlehem, PA 18015
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Abstract

We report Fe-42%Ni as a novel high-performance substrate for a-IGZO TFT fabrication after evaluating 8 different metals for chemical compatibility, mechanical flexing and dimensional stability. Excellent flexibility and rollability indicates that Fe-42%Ni would be a good choice as flexible substrate for R2R process. Pre-annealing process for stabilizing the substrate is studied and applied to the Fe-42%Ni foil before TFT fabrication. Staggered bottom gate a-IGZO TFTs which were fabricated on this substrate have field effect mobility of 12 cm2/V.s, threshold voltage of 2V, sub-threshold swing of 0.6V/decade and on/off current ratio exceeding 107.

Keywords

devicesalloythin film

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References

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