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Published online by Cambridge University Press: 25 February 2011
For the electromigration test of Si/TaSi2/(Al-1wt%Si) and Si/TaSi2/TiN/(Al-1wt%Si) multilayer contacts we employed the special test structures which allow to passage a pulsed electrical current through the semiconductor region lying under investigated contacts and insulated from them by n+/p-junction. The contacts were tested in the optimal conditions (temperature was cycled in the ranges from 50°C to 175°C with 300ms thermal cycle period at 25 mA constant electrical current passaged through the investigated contacts). It has been shown that the electromigration life time has been shortened by more than an order of the magnitude compared to 200°C constant temperature test. SEM investigations of the sputter deposited thin film of multilayer contact have also shown that the Al-Si thin film on the TaSi2 layer had a fine structure with the average grain size about 0,3 μm. However a presense of the TiN interlayer with the thickness of 0.05 - 0.1 pm results in an increase of the average grain size of the upper Al-Si film up to 0,8μm. The result is the increase in the electromigration process activation energy that improves the electromigration life time contacts containing the TiN interlayer.