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Excimer Laser Induced 5.8 eV Absorption and 1.9 eV Emission Bands in Fused Silicas

Published online by Cambridge University Press:  15 February 2011

Nobu Kuzuu ,
Yasutaka Matsumoto  and
Masataka Murahara
Nobu Kuzuu
Affiliation:
Nippon Silica Glass Yamaguchi Co., 4555 Kaisei-Cho, Shin-Nanyo, Yamaguchi 746, JAPAN
Yasutaka Matsumoto
Affiliation:
Guraduate Student of Faculty of Eng. Tokai Univ.
Masataka Murahara
Affiliation:
Faculty of Eng. Tokai Univ., 1117 Kitakaname, Hiratsuka, Kanagawa 259-12, JAPAN
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Abstract

Characteristics of ArF excimer laser induced 1.9 eV emission and 5.8 eV absorption bands in type III and soot remelted silicas were investigated. In a type III silica synthesized in a reducing condition, an absorption band at 5.8 eV band is induced. The creation of this band can be prevented by annealing in an atmosphere of He. In the soot remelted silicas with and without OH, the creation of the 5.8 eV band is strongly promoted by annealing in H2. An emission band at 1.9 eV is induced in a type III fused silica synthesized in an oxydizing condition and soot remelted silica containing OH. When annealing in He, creation of the 1.9 eV band is strongly promoted in the former but suppressed in the latter sample. This difference is derived from the difference of higher order structures between the type III and the soot remelted silicas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 244: Symposium J – Optical Waveguide Materials , 1991 , 33
Copyright
Copyright © Materials Research Society 1992

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References

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