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Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channels

Published online by Cambridge University Press:  15 February 2011

I-Chun Cheng ,
Steven Allen  and
Sigurd Wagner
I-Chun Cheng
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A.
Steven Allen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A.
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A.
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Abstract

Thin film transistors of nanocrystalline silicon (nc-Si:H) are made in the staggered topgate, bottom-source/drain geometry. To achieve both high carrier mobility and low off current, the nc-Si:H channel material must be kept thin but comprise a contiguous 10-nm thick crystalline layer at its top. We study this electrically most interesting top layer of the nc-Si:H channel film by AFM and SEM. Introducing an nc-Si:H seed layer underneath the TFT promotes the structural evolution of the nc-Si:H channel layer and raises the electron field effect mobility up to 40 cm2V-1s-1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H6.8
Copyright
Copyright © Materials Research Society 2003

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