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Epitaxial Growth of (100) GaAs on SOS using a Specifically Designed MOCVD System

Published online by Cambridge University Press:  28 February 2011

T. Nishimura ,
K. Kadoiwa ,
K. Mitsui  and
T. Murotani
T. Nishimura
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation 4-1, Mizuhara. Itami, Hyogo 664, Japan
K. Kadoiwa
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation 4-1, Mizuhara. Itami, Hyogo 664, Japan
K. Mitsui
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation 4-1, Mizuhara. Itami, Hyogo 664, Japan
T. Murotani
Affiliation:
Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation 4-1, Mizuhara. Itami, Hyogo 664, Japan
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Abstract

High quality (100) single domain GaAs layers are epitaxially grown on slightly misoriented (100) Si-on-(1102) sapphire(SOS) substrates by MOCVD. Epitaxial growth on a spherical SOS substrate reveals that R face (1102) should not be tilted toward C axis [0001], but toward [011] or [011] of Si. A new MOCVD system which has two reactors, one for Si cleaning, the other for GaAs deposition, is effective to obtain mirrorlike smooth surface. The X-ray FWHM of 10µm GaAs was reduced to 65 arcsec by the thermal cycle annealing.

A crack free 15 µm thick GaAs layer with a dislocation density of 3×106cm-2 is obtained by combining the thermal cycle annealing and the strained-layer superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 463
Copyright
Copyright © Materials Research Society 1990

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