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Enhancement of Gold on n-InGaAs Schottky Barrier Height by Using a thin p-InP Layer

Published online by Cambridge University Press:  22 February 2011

Bing Yang ,
J. C. Chen  and
F. S. Choa
Bing Yang
Affiliation:
Dept. of Electrical Engineering, U. of. Md, Baltimore, MD 21228
J. C. Chen
Affiliation:
Dept. of Electrical Engineering, U. of. Md, Baltimore, MD 21228
F. S. Choa
Affiliation:
Dept. of Electrical Engineering, U. of. Md, Baltimore, MD 21228
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Abstract

In this study, we demonstrate the enhancement of n-In0.53Ga0.47A s Schottky barrier height by using a thin (300-1800 Å) p-InP surface layer. An increase in the barrier height of 0.46 eV, making the total barrier height 0.66 eV, was obtained in a Au/p-InP/n-InGaAs structure, resulting in a great reduction of leakage currents. Results of the electrical measurements are summarized in table 1. The barrier height of n- In0.53Ga0.47As was increased from 0.2 eV to 0.66 eV when a 1200-Å-thick p-InP surface layer was employed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 259
Copyright
Copyright © Materials Research Society 1994

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References

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