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Enhanced Pteos and O3-Teos CVD Processes for Improved Step Coverage and Gap-Filling

Published online by Cambridge University Press:  25 February 2011

Sumanta K. Ghosh ,
Mark A. Bourgeois ,
K. Ramkumar  and
Arjun N. Saxena
Sumanta K. Ghosh
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, NY 12180–3590
Mark A. Bourgeois
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, NY 12180–3590
K. Ramkumar
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, NY 12180–3590
Arjun N. Saxena
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, NY 12180–3590
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Abstract

The step-coverage and gap-filling characteristics of SiO2 films deposited by TEOS based plasma CVD and Thermal CVD processes on AlX and Cu/X metallizations were studied. It was found that the conformality of the films, in the case of plasma CVD, is influenced by the relative flow rates of TEOS to oxygen. The suitability of the two types of SiO2 films for filling gaps of different aspect ratios on AlX and Cu/X metallizations with different aspect ratios was examined. The results are discussed and correlated with the other important characteristics of these SiO2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 875
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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