Hostname: page-component-54dcc4c588-tfzs5 Total loading time: 0 Render date: 2025-10-06T07:17:30.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhanced Metallization Stability on Mercury-Cadmium-Telluride

Published online by Cambridge University Press:  21 February 2011

A. Raisanen ,
G. Haugstad ,
X. Yu ,
G. Ceccone  and
A. Franciosi
A. Raisanen
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
G. Haugstad
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
X. Yu
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
G. Ceccone
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
A. Franciosi
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
Get access

Abstract

Synchrotron radiation photoemission studies of ultra-thin Yb diffusion barriers at the interface between Mercury-Cadmium-Telluride semiconductors and Ag overlayers show that the interlayers act as effective diffusion barrier only after thicknesses of 10-15 Å are reached. Studies of interlayer morphology by means of photoemission from physisorbed Xe indicate that effective diffusion barriers are consistent with a model in which a continous Yb-Te reacted layer is covered by an Yb-rich layer with high alloying enthalpy for Hg.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Franciosi, A., Raisanen, A., Wall, A., Chang, S., Philip, P., Troullier, N., and Peterman, D.J., Appl. Phys. Lett. 52, 1490 (1988).Google Scholar
2. Raisanen, A., Wall, A., Chang, S., Philip, P., Troullier, N., Franciosi, A., and Peterman, D. J., J. Vac. Sci. Technol. A6, 2741 (1988).Google Scholar
3. Raisanen, A., Peterman, D. J., Wall, A., Chang, S., Haugstad, G., Yu, X., and Franciosi, A., Solid State Commun. 71, 585 (1989).Google Scholar
4. Mills, K.C., Thermodynamic Data for Inorganic Sulphides, Selenides. and Tellurides, (Butterworths, London, 1974).Google Scholar
5. Miedema, A.R., Chatel, P.F. de, and Boer, F.R. de, Physica B100, 1 (1980).Google Scholar
6. Friedman, D.J., Carey, G.P., Shih, C.K., Lindau, I., Spicer, W.E., and Wilson, J.A., Appl. Phys. Lett. 48, 44 (1986).Google Scholar
7. Friedman, D.J., Carey, G.P., Shih, C.K., Lindau, I., Spicer, W.E., and Wilson, J.A., J. Vac. Sci. Technol. A4, 1977 (1986).Google Scholar
8. Wandelt, K., J. Vac. Sci. Technol. A2, 802 (1984).Google Scholar
9. Steinberger, I.T. and Wandelt, K., Phys. Rev. Lett. 58, 2494 (1987).Google Scholar
10. Onellion, M. and Erskine, J.L., Phys. Rev. B36, 4495 (1987).Google Scholar
11. Raisanen, A., Haugstad, G., Yu, X., Ceccone, G., and Franciosi, A., J. Vac. Sci. Technol. A (submitted)Google Scholar