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Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

Published online by Cambridge University Press:  10 February 2011

T. S. Lay ,
M. Hong ,
J. Kwo ,
J. P. Mannaerts ,
W. H. Hung  and
D. J. Huang
T. S. Lay
Affiliation:
Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Taiwan
M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ07974
J. Kwo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ07974
J. P. Mannaerts
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ07974
W. H. Hung
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, Taiwan
D. J. Huang
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, Taiwan
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Abstract

We report the energy band offsets at a Ga2O3(Gd2O3)-GaAs interface. The valence-band offset (ΔEv) is ∼ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-Ga2O3(Gd2O3)-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (ΔEC) ∼ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m*) ∼ 0.29 me of the Ga2O3(Gd2O3) film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 131
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

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