Hostname: page-component-6dbcb7884d-xl9kw Total loading time: 0 Render date: 2025-02-14T01:49:00.860Z Has data issue: false hasContentIssue false
  • English
  • Français

Emission Characteristics of GaN-Based EL Device with AC Operation

Published online by Cambridge University Press:  17 March 2011

Tohru Honda  and
Hideo Kawanishi
Tohru Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
Hideo Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
Get access

Abstract

GaN-based electroluminescence devices (ELDs) were fabricated using a GaN powder as an emission layer. The electroluminescence spectra of the GaN ELDs under AC operation were observed at room temperature. The emission characteristics of GaN-based ELDs were studied to compare the EL spectra and the cathodoluminescence (CL) spectra. It was clarified that the EL spectra were similar to the CL spectra of a GaN emission layer. The emission peaks in the EL spectra were shifted toward the high-energy side with increasing operation frequency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.13
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Akasaki, I., Amano, H. and Suemune, I.: Inst. Phys. Conf. Ser. 142, (1996) 7.Google Scholar
[2] Nakamura, S. and Fasol, G.: The Blue Laser Diode (Springer-Verlag, Berlin, 1997).Google Scholar
[3] Garter, M., Birkhahn, R., Steckl, A. J. and Scofield, J.: MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G11.3.Google Scholar
[4] Steckl, A. J. and Zavada, J. M.: MRS Bull. 24(9) (1999) 33.Google Scholar
[5] Morishima, S., Maruyama, T. and Akimoto, K.: J. Cryst. Growth 209, (2000) 378.Google Scholar
[6] Heikenfield, J. and Steckl, A. J.: Materials Research Society 2000 Fall Meeting, Boston, MA, G10.4 (2000).Google Scholar
[7] Kanie, H., Kawano, T. and Koami, H.: Blue Laser and Light Emitting Diodes II, Ed. Onabe, K., Hiramatsu, K., Itaya, K. and Nakano, Y., Ohmsha, Tokyo, 1998, p. 552.Google Scholar
[8] Hiroki, M., Asahi, H., Tampo, H., Asami, K. and Gonda, S.: J. Cryst. Growth 209 (2000) 387.Google Scholar
[9] Schineller, B., Guttzeit, A., Vertommen, F., Schön, O., Heuken, M., Heime, K. and Beccard, R.: Cryst, J., Growth 189/190, (1998) 798.Google Scholar
[10] Maruska, H. P. and Tietjen, J. J.: Appl. Phys. Lett. 15, (1969) 327.Google Scholar
[11] Nahm, K. S., Ahn, S. H. and Lee, S. H.: Tech. Digest of International Workshop on Nitride Semiconductors, Nagoya, Japan, PTD–32 (2000).Google Scholar
[12] Hara, K., Matsuo, Y. and Matsuno, Y.: Materials Research Society 2000 Fall Meeting, Boston, MA, G3.31 (2000).Google Scholar