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Electronic structure of Zn(Mn)O surface alloy - a resonant photoemission study

Published online by Cambridge University Press:  01 February 2011

E. Guziewicz ,
K. Kopalko ,
J. Sadowski ,
M. Guziewicz  and
Z. Golacki
E. Guziewicz
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87544, USA Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
K. Kopalko
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
J. Sadowski
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warszawa, Poland Niels Bohr Institute fAFG, Ørsted Laboratory, University of Copenhagen, Denmark MAX-lab, Lund University, Lund, Sweden
M. Guziewicz
Affiliation:
Institute of Electron Technology, Warszawa, Poland
Z. Golacki
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
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Abstract

Electronic structure of Mn/ZnO system has been investigated by synchrotron radiation photoemission. Manganese vacuum deposition was done at room temperature onto a ZnO(0001) single crystal for coverage ΘMn < 4 ML. Photoemission spectra taken near Mn3p-Mn3d absorption edge after each deposition step show resonant enhancement of Mn3d states within 10 eV of the Fermi level. The experimentally deduced partial Mn3d density of states for Θ > 1.2 ML shows at least three features: a major Mn3d structure at 3.8–4.5 eV below the Fermi energy, a valence structure at lower binding energy (1–3 eV) and a broad satellite in the 5.5 – 9 eV range. The branching ratio of satellite/main structure increases with deposition from 0.33 for 0.4 ML to 0.65 for 4 ML. After annealing up to 500 C the satellite/main ratio decreases to 0.43 indicating a high degree of hybridization between the Mn3d states and valence band of ZnO. After annealing no manganese cap layer was found at the crystal surface as was confirmed by the lack of metallic Fermi edge in photoemission spectra and by scanning Auger spectroscopy experiment. The photoemission Mn3p core level spectra taken after annealing consist of two components separated by about 4eV. It is evidence that at least two manganese states are observed in the Mn-ZnO interface region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E6.4
Copyright
Copyright © Materials Research Society 2004

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References

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