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Electromigration Resistance of Multilayer Aluminum/Titanium Interconnects

Published online by Cambridge University Press:  26 February 2011

M. Finetti ,
H. Ronkainen ,
M. Blomberg  and
I. Suni
M. Finetti
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland Otakaari 7 B, SF-02150 Espoo, Finland
H. Ronkainen
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland Otakaari 7 B, SF-02150 Espoo, Finland
M. Blomberg
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland Otakaari 7 B, SF-02150 Espoo, Finland
I. Suni
Affiliation:
Semiconductor Laboratory, Technical Research Centre of Finland Otakaari 7 B, SF-02150 Espoo, Finland
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Abstract

We have investigated the electromigration resistance of Al-Si/Ti multilayer interconnects. For comparison Al-Si and Al-Si/Ti/Al-Si films were also prepared. The linewidths ranged between 1.6 and 5, um. A temperature-ramp resistance analysis was applied at direct wafer level, to detect electrically transport of material and derive the electromigration kinetic parameters in test vehicles with different geometries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 811
Copyright
Copyright © Materials Research Society 1986

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References

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