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Electrical Property of Vertically Grown Carbon Nanotube and its Application to the Nanofunctional Devices

Published online by Cambridge University Press:  21 March 2011

Jaeuk Chu ,
Kwangseok Jeong ,
Eunju Bae ,
Inkyeong Yoo ,
Wonbong Choi  and
Jujin Kim
Jaeuk Chu
Affiliation:
The National Program for Tera-Level Nanodevices, Samsung Advanced Institute of Technology, Suwon, Korea
Kwangseok Jeong
Affiliation:
The National Program for Tera-Level Nanodevices, Samsung Advanced Institute of Technology, Suwon, Korea
Eunju Bae
Affiliation:
The National Program for Tera-Level Nanodevices, Samsung Advanced Institute of Technology, Suwon, Korea
Inkyeong Yoo
Affiliation:
Materials and Devices Lab, Samsung Advanced Institute of Technology, Suwon, Korea
Wonbong Choi
Affiliation:
Materials and Devices Lab, Samsung Advanced Institute of Technology, Suwon, Korea
Jujin Kim*
Affiliation:
Department of Physics, Chonbuk National University, Chonju 561–756, Korea
*
wbchoi@sait.samsung.co.kr, jkchu@sait.Samsungco.kr 82-31-280-9351
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Abstract

A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 600∼700 °C. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds Ω. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T-1) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.

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References

REFERENCES

1. Iijima, S., Nature (London) 354, 56 (1991).Google Scholar
2. Kong, J., Zhou, C., Yenilmez, E. and Dai, H., Appl. Phys. Letters 77, 3977–3979 (2000)Google Scholar
3. Ahlskog, M., Tarkiainen, R., Roschier, L. and Hakonen, P., Appl. Phys. Letters 77, 4037–4039 (2000)Google Scholar
4. haruyama, J., Takesue, I. and Sato, Y. Appl. Phys. Letters 77, 2891–2893 (2000)Google Scholar
5. Li, J., Moskovits, M., and Haslett, T. L., Chem. Mater. 10. 1963 (1998)Google Scholar
6. Zhang, Y, Ichihashi, T, Landree, E, Nihey, F and Ijima, S, Science 285 1719 (1999)Google Scholar
7. Davydov, D.N., Li, J., Shelimov, K.B., Haslett, T.L., Statt, B.W. and Moskovits, M. J. Appl. Phys., 88 7205–7208 (2000)Google Scholar
8. Davydov, D.N., Haruyama, J., Routkevitch, D., Ellis, D., Statt, B.W., Moskovits, M., and Xu, J.M., Phys. Rev. B 57, 13550(1998)Google Scholar