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Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide

Published online by Cambridge University Press:  21 March 2011

J. Kim ,
B. P. Gila ,
R. Mehandru ,
J.W. Johnson ,
J. H. Shin ,
K.P. Lee ,
B. Luo ,
A. Onstine ,
C. R. Abernathy  and
S.J. Pearton
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J. Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
B. P. Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
R. Mehandru
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
J.W. Johnson
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
J. H. Shin
Affiliation:
Samsung Electronics, Kyungki-Do, Korea.
K.P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
B. Luo
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
A. Onstine
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
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Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing MgO as the gate oxide. MgO was grown at 100°C on MOCVD grown n-GaN in a molecular beam epitaxy system using a Mg elemental source and an electron cyclotron resonance oxygen plasma. H3PO4 based wet-chemical etchant was used to remove MgO to expose the underlying n-GaN for ohmic metal deposition. Electron deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallization, respectively. An interface trap density of low-to-mid 1011 eV-1cm-2was obtained from temperature conductance-voltage measurements. Terman method was also used to estimate the interface trap density and a slight lower number was obtained as compared to the conductance method. Results from elevated temperature (up to 300°C) conductance measurements showed an interface state density roughly three times higher(6x1011 eV–1 cm-2 ) than at 25°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.30.1
Copyright
Copyright © Materials Research Society 2002

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