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The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

H. Yang ,
H Niimi ,
Y. Wu  and
G. Lucovsky
H. Yang
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
H Niimi
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Y. Wu
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Mesarjian et al. were the first to recognize the effects of suboxide interfacial transition regions at Si-SiO2 interfaces on tunneling oscillations in the Fowler-Nordheim regime. This paper extends these ideas to the direct tunneling regime and focuses on differences in interfacial transition regions between Si-SO2 interfaces with, and without monolayer level interface nitridation. Tunneling currents in both the direct and Fowler-Nordheim tunneling regimes are reduced by monolayer level interface nitridation for PMOS and NMOS devices with the same oxide-equivalent thickness. This paper develops a modified barrier layer model based on analysis of XPS results that accounts for these reductions in current in the direct tunneling regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 241
Copyright
Copyright © Materials Research Society 1999

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References

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