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Effect of Interface on Capture and Emission Processes Via Deep Centers

Published online by Cambridge University Press:  21 February 2011

I. N. Yassievich  and
A. A. Pakhomov
I. N. Yassievich
Affiliation:
Ioffe Physico-Technical Institute, Department of Semiconductor Heterostructures, Politeknicheskaya 26, 194021 St. Petersburg, Russia
A. A. Pakhomov
Affiliation:
Ioffe Physico-Technical Institute, Department of Semiconductor Heterostructures, Politeknicheskaya 26, 194021 St. Petersburg, Russia
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Abstract

It is shown that the carrier capture and emission rates by deep centers situated near an interface (crystal surface or heterojunction) dramatically increase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 435
Copyright
Copyright © Materials Research Society 1994

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References

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