Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-02-10T09:35:30.254Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Electric Field and Current Injection on the Main Electron Trap in Bulk GaAs

Published online by Cambridge University Press:  15 February 2011

S. Makram–Ebeid
S. Makram–Ebeid*
Affiliation:
Laboratoires d'Electronique et de Physique Appliquée 3, avenue Descartes, 94450, Limeil–Brévannes (France)
Get access

Abstract

The dark capacitive transients related to the main electron trap in bulk and VPE GaAs have been studied in detail. The low temperature low field transients are induced by electrons injected from the metal counter electrode. Both hot electron capture and impact ionization effects are observed. At high fields, a phonon assisted tunneling model accounts for the observations and yields the values of the Franck Condon Shift Sw and the energy w of the phonon coupled to the level. These values are found to be in good agreement with other independent estimates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 495
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Makram–Ebeid, S., Appl. Phys. Lett. 37, 464 (1980).CrossRefGoogle Scholar
2. Makram–Ebeid, S., Martin, G.M. and Woodard, D.W., 15th Int. Conf. on the Phys. 501 of Semicond., Kyoto (Sept. 1980) – To be published Inst. Phys. (London).Google Scholar
3. Pons, D. and Makram–Ebeid, S., J. de Phys. Lett. (F) 40, 1161 (1979).Google Scholar
4. Lang, D.V., J. Appl. Phys. 45, 3014 (1974).Google Scholar
5. Mircea, A. and Mitonneau, A., J. de Phys. Lett. (F) 40, L31 (1979).CrossRefGoogle Scholar
6. Giaever, I., in Tunneling in Solids, Bernstein, E. and Lundquist, S. Editors, Plenum (1969) p. 19.Google Scholar
7. Mitonneau, A., Mircea, A., Martin, G.M. and Pons, D., Rev. de Phys. Appl. (F) 14, 853 (1979).Google Scholar
8. Makram–Ebeid, S. and Lannoo, M., to be published.Google Scholar
9. Ridley, B.K., J. Phys. C, 11, 2323 (1978).Google Scholar
10. Bois, D., Chantre, A., Vincent, G. and Nouaillat, A., Inst. Phys. Conf. Ser. n° 43, 295 (1979).Google Scholar