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The Effect of Defects and Dopants on Thermal Conduction in GaN Films

Published online by Cambridge University Press:  01 February 2011

J. Zou ,
D. Kotchetkov ,
A.A. Balandin ,
D.I. Florescu  and
F.H. Pollak
J. Zou
Affiliation:
Physics Department, Brooklyn College of the City University of New York, Brooklyn, NY 11210
D. Kotchetkov
Affiliation:
Department of Electrical Engineering, University of California at Riverside, Riverside, CA 92521 U.S.A.
A.A. Balandin*
Affiliation:
Department of Electrical Engineering, University of California at Riverside, Riverside, CA 92521 U.S.A.
D.I. Florescu
Affiliation:
Emcore Corporation, 145 Belmont Drive, Somerset, NJ 08873
F.H. Pollak
Affiliation:
Physics Department, Brooklyn College of the City University of New York, Brooklyn, NY 11210
*
1Corresponding author; electronic address: alexb@ee.ucr.edu
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Abstract

We present a theoretical investigation of the effects of dislocations, impurities and dopants on the thermal conductivity of GaN layers. It is shown that the experimentally observed decrease of the room-temperature thermal conductivity with increasing doping density is a result of enhanced phonon relaxation on silicon dopant atoms. Scattering of acoustic phonons on free carriers plays a relatively minor role in GaN. The functional dependence of the thermal conductivity on doping density is in good agreement with experiment. A developed model can be used for thermal budget calculation in high-power density GaN devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.25
Copyright
Copyright © Materials Research Society 2002

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References

1. Florescu, D.I., Asnin, V.M., Pollak, F.H., et al., Appl. Phys. Lett., 77, 1464 (2000)Google Scholar
2. Florescu, D.I., Asnin, V.M., Pollak, F.H., Compound Semicond., 7, 62 (2001)Google Scholar
3. Luo, C.-Y., Marchand, H., Clarke, D.R., and DenBaars, S.P., Appl. Phys. Lett., 75, 4151 (1999)Google Scholar
4. Slack, G.A., J. Phys. Chem. Solids, 34, 321 (1973)Google Scholar
5. Kotchetkov, D., Zou, J., Balandin, A. A., Florescu, D.I., and Pollak, F.H., Appl. Phys. Lett., 79, 4316 (2001)Google Scholar
6. Zou, J., Kotchetkov, D. and Balandin, A. A., Florescu, D.I. and Pollak, Fred H., J. Appl. Phys.(submitted, 2002).Google Scholar
7. Florescu, D.I., Asnin, V.M., Pollak, F.H., Molnar, R.J., and Wood, C.E.C., J. Appl. Phys., 88, 3295 (2000)Google Scholar
8. Klemens, P.G., in Solid State Physics, edited by Seitz, F. and Turnbull, D. (Academic, New York, 1958), Vol. 7; P.G. Klemens, Proc. Phys. Soc, LXVIII, 12-A, 1113 (1995).Google Scholar
9. Bhandari, C.M. and Rowe, D.M., in Thermal Conduction in Semiconductors (John Wiley & Sons, 1988).Google Scholar
10. Chin, V.W.L., Tansley, T.L., and Osotchan, T., J. Appl. Phys., 75, 7366 (1994)Google Scholar
11. Pearton, S.J., Zolper, J.C., Shul, R.J., Ren, F., J. Appl. Phys. 86, 1 (1999)Google Scholar