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Dopant Incorporation in Silicon During NonequilibriumSolidification: Comparison of Two Processes 1

Published online by Cambridge University Press:  25 February 2011

E.P. Fogarassy ,
D.H. Lowndes ,
J. Narayan  and
C.W. White
E.P. Fogarassy
Affiliation:
Guest scientist from the Centre National de la Recherche Scientifique, Strasbourg, 67037, FRANCE
D.H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Narayan
Affiliation:
On sabbatical at the Microelectronics Center of North Carolina, Research Triangle Park, NC 27709 and the Materials Engineering Department, North Carolina State University, Raleigh, NC 27650.
C.W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

The incorporation properties of implanted or deposited Sb into the siliconlattice during laser irradiation with a UV laser has been studied. For bothimplanted or deposited Sb, we find a maximum substitutional concentration of2.1 × 1021/cm3 following laser melting andsolidification at V ; 6 m/sec. In both cases, substitutional solubility islimited by inter-facial instabilities which develop during regrowth. For thedeposited case we observe in addition a much larger cellular microstructurewhich may result from convection induced instabilities.

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Footnotes

*

Research sponsored by the Division of Materials Sciences, USDOE undercontract DE-ACO5-840R21400 with Martin Marietta Energy Systems,Inc.

References

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