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Dislocation Luminescence in Wurtzite GaN

Published online by Cambridge University Press:  10 February 2011

Y. G. Shreter ,
Y. T. Rebane ,
T. J. Davis ,
J. Barnard ,
M. Darbyshire ,
J. W. Steeds ,
W. G. Perry ,
M. D. Bremser  and
R. F. Davis
Y. G. Shreter
Affiliation:
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, St.Petersburg 194021, Russia, e-mail: Y.Shreter @ cmc.ioffe.rssi.ru
Y. T. Rebane
Affiliation:
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, St.Petersburg 194021, Russia, e-mail: Y.Shreter @ cmc.ioffe.rssi.ru
T. J. Davis
Affiliation:
University of Bristol, H.H.Wills Laboratory, Tyndall Avenue, Bristol, BS8 1TL, UK
J. Barnard
Affiliation:
University of Bristol, H.H.Wills Laboratory, Tyndall Avenue, Bristol, BS8 1TL, UK
M. Darbyshire
Affiliation:
University of Bristol, H.H.Wills Laboratory, Tyndall Avenue, Bristol, BS8 1TL, UK
J. W. Steeds
Affiliation:
University of Bristol, H.H.Wills Laboratory, Tyndall Avenue, Bristol, BS8 1TL, UK
W. G. Perry
Affiliation:
Departement of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
M. D. Bremser
Affiliation:
Departement of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
R. F. Davis
Affiliation:
Departement of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
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Abstract

The 364 nm PL-system in GaN is attributed to the formation of dislocation excitons and charged dislocation excitons on c-axis screw dislocations. The binding energy for the dislocation exciton, charged dislocation exciton and a hole on the screw dislocation were determined as 35 meV, 7 meV and 65 meV respectively, in accord with experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 683
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Rebane, Y.T. and Shreter, Y.G. in Polycrystalline Semiconductors II, Eds.Wernerand, J.H. Strunk, H.P..Springer - Verlag, pp.28–39 (1991)Google Scholar
[2] Shreter, Y.G., Rebane, Y.T. and Peaker, A.R.. Phys.Stat.Sol..(a), 138, 681 (1993).Google Scholar
[3] Shreter, Y.G. et al, Crystal Growth, J., 159, 883 (1996).Google Scholar
[4] Ponce, F.A., Bour, D.P., Gotz, W. and Wright, P.J., Appl.Phys.Lett., 68, 57 (1996).Google Scholar
[5] Wetzel, C. et al, Appl.Phys.Lett., 68, 2556 (1996).Google Scholar
[6] Weeks, T.W. Jr. et al, J.Mater.Res., 11, 1011 (1996).Google Scholar
[7] Ning, X.J. et al, J.Mater.Res., 11, 580 (1996).Google Scholar
[8] Rebane, Y.T., Phys.Rev.,B52, 1590 (1995).Google Scholar
[9] Rebane, Y.T. and Steeds, J.W., Phys.Rev. B48, 14963 (1993).Google Scholar
[10] Bishop, D.M., J.Chem.Phys., 53, 1541 (1970).Google Scholar