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Development of the Very thin Microcrystalline N-Layer and its Application to the Stacked Solar Cell

Published online by Cambridge University Press:  21 February 2011

F. Nakabeppu ,
T. Ishimura ,
K. Kumagai  and
K. Fukui
F. Nakabeppu
Affiliation:
CRDL TONEN Corp., 1-3-1, Nishi-turugaoka, Ohi-machi, Iruma-gun, Saitama-ken, 354, Japan
T. Ishimura
Affiliation:
CRDL TONEN Corp., 1-3-1, Nishi-turugaoka, Ohi-machi, Iruma-gun, Saitama-ken, 354, Japan
K. Kumagai
Affiliation:
CRDL TONEN Corp., 1-3-1, Nishi-turugaoka, Ohi-machi, Iruma-gun, Saitama-ken, 354, Japan
K. Fukui
Affiliation:
CRDL TONEN Corp., 1-3-1, Nishi-turugaoka, Ohi-machi, Iruma-gun, Saitama-ken, 354, Japan
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Abstract

In order to improve the efficiency of the amorphous silicon stacked solar cells, we have developed the preparation method of highly conductive very thin microcrystalline silicon n-layers. We have found that the addition of a small amount of Ar gas to deposition gases is effective to make microcrystallite size small. The obtained thin films were characterized by conductivity measurement, R-HEED observation and TEM observation.

This newly developed thin microcrystalline n-layers have been applied to the stacked solar cells. Increase of Jsc by 5-6% has been achieved because of the reduction of light absorption loss in n-layer without decrease of Voc and FF.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 389
Copyright
Copyright © Materials Research Society 1990

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References

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