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The Determination of Optoelectronic Properties of Microcrystalline andAmorphous Silicon Films

Published online by Cambridge University Press:  17 March 2011

Marinus Kunst ,
Susanne von Aichberger ,
Wilhelm Thom  and
Frank Wünsch
Marinus Kunst
Affiliation:
Dept. Solare Energetik, Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Susanne von Aichberger
Affiliation:
Dept. Solare Energetik, Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Wilhelm Thom
Affiliation:
Dept. Solare Energetik, Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Frank Wünsch
Affiliation:
Dept. Solare Energetik, Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
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Abstract

The study and characterization of the (opto)electronic properties of a-Si:H and µSi filmsby contactless transient photoconductivity measurements is presented. The importance ofminority carrier trapping is shown for the example of a-Si:H films prepared with different dopinglevels. It is shown that the microwave mobility determined by these measurements is a versatiletool for the characterization of the films. Examples are given by the study of µ Si filmsproduced by laser crystallization of a-Si:H films and the optimization of the substratetemperature for the Hot Wire deposition of µ Si films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A23.2
Copyright
Copyright © Materials Research Society 2001

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References

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