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The Detailed Variation of Boron and Fluorine Profiles with Tilt and Rotation Angles for BF2+ ION Implantation in (100) Silicon

Published online by Cambridge University Press:  28 February 2011

Puneet Gupta ,
Changhae Park ,
Kevin Klein ,
Shyh-horng Yang ,
Steve Morris ,
Vu Do ,
Al Tasch ,
Robert Simonton  and
Gayle Lux
Puneet Gupta
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
Changhae Park
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
Kevin Klein
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
Shyh-horng Yang
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
Steve Morris
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
Vu Do
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
Al Tasch
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
Robert Simonton
Affiliation:
Eaton Corporation, Austin. Texas 78758
Gayle Lux
Affiliation:
Charles Evans and Associates, California 94063
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Abstract

Over 250 boron and over 250 fluorine profiles have been obtained from BF2+ implants over a wide range of implant energies, doses, tilt angles, and rotation angles. A detailed study has been conducted on the boron and fluorine profile variations with the tilt and rotation angles over the available range of energies and doses. Channeling through a few low index axial and planar channels in (100) silicon has been found to account for the observed profile variations with implant angle. Tilt and rotation angle combinations which minimize channeling and ensure process uniformity have been deduced.

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References

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