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Dependence of Hydrogen Incorporation in Undoped a-Si:H and µc-Si:H on Hydrogen Dilution During Pecvd

Published online by Cambridge University Press:  26 February 2011

N. M. Johnson ,
S. H. Wolff ,
C. D. Doland  and
J. Walker
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
S. H. Wolff
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. D. Doland
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J. Walker
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

New results are reported on the effect of hydrogen dilution on the incorporation of hydrogen in undoped, unalloyed silicon films that were deposited by plasma-enhanced chemical vapor deposition in an rf-glow discharge system. A crystalline phase was detected for dilution ratios (H2: SiH 4) of 20:1 and greater. This phase change was accompanied by the appearance of higher-order silicon-hydride complexes. It was further observed that the H concentration in the films increased with dilution for ratios of 10:1 and greater. These results are compared with other recent studies of hydrogen dilution.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 85
Copyright
Copyright © Materials Research Society 1988

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