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Dependence of H Diffusion in Hydrogenated Silicon on Doping and the Fermi Level

Published online by Cambridge University Press:  17 March 2011

Wolfhard Beyer  and
Uwe Zastrow
Wolfhard Beyer
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-IPV), Forschungszentrum Jülich, D-52425 Jülich, Germany
Uwe Zastrow
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-IPV), Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

For three types of hydrogenated silicon films, amorphous, microcrystalline and crystalline hydrogenated silicon, hydrogen diffusion was studied as a function of doping level employing depth profiling by secondary ion mass spectrometry. Hydrogen implantation was used to control the hydrogen concentration. All three materials show a similar doping dependence of H diffusion, namely a strong increase upon boron (p-type) doping and a much lesser increase for n- type (P, As) doping. In a band model of H diffusion, the effect is related to a decrease in energy of the hydrogen diffusion path. Possible explanations are a different charge state of diffusing hydrogen or an effect of the Fermi energy on the release energy of neutral hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A20.4
Copyright
Copyright © Materials Research Society 1999

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References

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