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Deep States in a-Si:H - Changes with Doping and Applied Stress.

Published online by Cambridge University Press:  26 February 2011

J. Kočka  and
M. Vanéček
J. Kočka
Affiliation:
Institute of Physics, Czech. Academy of Sciences, Na Slovance 2, 180 40 Prague 8, Czechoslovakia.
M. Vanéček
Affiliation:
Institute of Physics, Czech. Academy of Sciences, Na Slovance 2, 180 40 Prague 8, Czechoslovakia.
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Abstract

Recent Constant Photocurrent Method (CPM) results and a new model of a-Si:H density of states are briefly reviewed. The small but systematic changes of subgap absorption (α) with the applied external stress have been found. When light-soaking is done under the applied stress the strong increase of α is observed. The μτ (mobility-lifetime) versus α duality is demonstrated. The increase of the dangling bond density, combined with the change of its charge state, is used for the explanation of duality. The light induced creation of dangling bond-impurity intimate pairs is speculated to be the driving force for the Fermi level shift.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 83
Copyright
Copyright © Materials Research Society 1987

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