Hostname: page-component-7dd5485656-bt4hw Total loading time: 0 Render date: 2025-10-31T03:49:50.595Z Has data issue: false hasContentIssue false
  • English
  • Français

Cross-Sectional TEM Specimen Preparation of Semiconductor Devices by Focused Ion Beam Etching

Published online by Cambridge University Press:  16 February 2011

Kyung-ho Park
Kyung-ho Park*
Affiliation:
Fujitsu Ltd., Process Development Division, 1015 Kamikodanaka, Kawasaki, 211, Japan.
Get access

Abstract

A procedure for preparing cross-sectional TEM specimens by focused ion beam etching (FIB) of specific regions on an integrated circuit chip is outlined. The investigation of the morphology, structure and local chemistry of precisely selected regions of semiconductor devices becomes increasingly important since the lateral dimensions and layer thickness of device structures are continually being reduced. The standard technique of preparing specimens for TEM, whether planar or cross-sectional, cannot select particular small regions. Some techniques and a number of tools and fixtures have been proposed which allow us to prepare TEM specimen of prespecified locations in complex devices. Most of these techniques, however, are still very difficult, tedious process and time consuming.

A new technique has been proposed recently involving the use of FIB. The technique ensures that the preselected area of submicron scale will be located in the electron transparent section used for TEM imaging, in preparation turn-around time of about two hours. The TEM imaging of specific contacts via hole in a VLSI chip is illustrated.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1) Abrahams, M. S. and Buiocchi, C. J., J. of Appl. Phys., 45, 3315 (1974).Google Scholar
2) Sheng, T. T. and Marcus, R. B., J. of Electrochem. Soc., 127, 737 (1980).Google Scholar
3) Bravman, J. C. and Sinclair, R., J. of Electron Microscopy Technique, 1, 53 (1984).Google Scholar
4) Sands, T., Mat. Res. Soc. Symp. Proc., 62, 25 (1986).Google Scholar
5) Dobisz, E. A., Craighead, H. G., Beebe, E. D. and Levkoff, J., J. of Vac. Sci. Technol., B4, 850 (1986).Google Scholar
6) Wetzel, J. T. and Danner, D. A., Mat. Res. Soc. Symp. Proc., 115, 253 (1988).Google Scholar
7) Cowden, W. G. and Datye, A. K., Mat. Res. Soc. Symp. Proc., 115, 109 (1988).Google Scholar
8) Klepeis, S. J., Benedict, J. P. and Anderson, R. M., Mat. Res. Soc. Symp. Proc., 115, 179 (1988)Google Scholar
9) Klepeis, S. J., Benedict, J. P. and Anderson, R., Proc. Of Electron Microscopy Society of America, 47, 712 (1989).Google Scholar
10) Anderson, R., Klepeis, S., Benedict, J., Vandygrift, W. G. and Orndorff, M. 6th Microscopy of Semiconducting Materials, Proc. Inst. of Phys. Conf., 100, 491 (1989).Google Scholar
11) Kirk, E. C. G., Williams, D. A. and Ahmed, H., 6th Microscopy of Semiconducting Materials, Proc. Inst. of Phys. Conf., 100, 501 (1989).Google Scholar
12) Glanville, J., Solid State Technology, May, 271 (1989).Google Scholar
13) Nikawa, K., Nasu, K., Murase, M., Kaito, T., Adachi, T. and Inoue, S., Proc. of 1989 International Reliability Physics Symposium 43, (1989).Google Scholar