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Condition of Interface: Anodic Oxide - A3B3 Semiconductor

Published online by Cambridge University Press:  21 February 2011

Gennady S. Korotchenkov  and
Victor A. Michailov
Gennady S. Korotchenkov
Affiliation:
Laboratory of Microelectronics, Technical University of Moldova, Bid. Stefan eel Mare, 168. Chisinau, 277012, Moldova.
Victor A. Michailov
Affiliation:
Laboratory of Microelectronics, Technical University of Moldova, Bid. Stefan eel Mare, 168. Chisinau, 277012, Moldova.
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Abstract

In this article the analysis of Auger-profiles of anodic oxide-semiconductor structures, which were formed on the base of InP, InGaAs and InGaAsP was made. It was determined that anodic oxide-InP interface has minimum thickness of intermediate layer between oxide and semiconductor. It got the thermodynamic substantiation of the effects observed.

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References

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