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Composition and Structure of Si3n4 Implanted with Ti AT 900°C

Published online by Cambridge University Press:  26 February 2011

I. L. Singer ,
R. G. Vardiman  and
C. R. Gossett
I. L. Singer
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
R. G. Vardiman
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
C. R. Gossett
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
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Abstract

Ti+ ions were implanted to high fluences (up to 5 × 1017 /cm2 ) into Si3N4 substrates heated to around 900°C. Composition vs depth profiles were obtained by RBS (in conjunction with RUMP analysis) and microstructures were examined by TEM. At a fluence of 4 × 1017 /cm2, the Si concentration was considerably reduced at the Ti peak depth but enriched near the surface. By 5 × 1017 /cm2, Si was nearly depleted from the implanted layer, leaving a Ti-rich nitride layer merging continuously into Si3N4. TEN detected TiN precipitates up to several pm in diameter, and coherent with Si3N4 crystallites. A Si-Ti-N ternary phase diagram is used to interpret the observed solid state reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 201
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Yust, C.S. and McHargue, C.J., J. Am. Ceram. Soc., 67, 117 (1984).Google Scholar
2. Burnett, P.J. and Page, T.F., J. Mater. Sci., 19, 3524 (1984).Google Scholar
3. Hioki, T., Itoh, A., Ohkubo, M., Noda, S., Doi, H., Kawamoto, J. and Kamigaito, O., J. Mater. Sci., 21, 1328 (1986).CrossRefGoogle Scholar
4. Burnett, P. J. and Page, T. F., in Science of Hard Materials, edited by Almond, E.A. (Adam Hilger, London, 1986) p. 789.Google Scholar
5. Burnett, P.J. and Page, T.F., Radiat. Effects, 97, 283 (1986)Google Scholar
6. McHargue, C.J.,Farlow, G.C., White, C.W., Williams, J.M., Appleton, B.R., H. Naramoto Mater. Sci. Eng., 69, 123 (1985).Google Scholar
7. Singer, I.L., Surf. Coat.and Tech. 33, 487 (1987).Google Scholar
8. Manning, I. and Mueller, G.P., Computer Phys. Commun. 7, 85 (1974).CrossRefGoogle Scholar
9. Doolittle, L.R., Nucl. Instrum. and Methods, B9, 344 (1985).CrossRefGoogle Scholar
10. Morgan, A.E., Broadbent, E.K., and Sadana, E.K. Appl. Phys. Lett. 49, 1236 (1986).CrossRefGoogle Scholar
11. Barbour, J.C., Kuiper, A.E.T., Willemsen, M.F.C., and Reader, A.H. Appl. Phys. Lett. 50, 953 (1987).Google Scholar
12. Beyers, R., Sinclair, R. and Thomas, M.E., J. Vac. Sci. Technol. 82, 781 (1984). [Note an error in the Ti-Sn-N drawing in Fig. 4. The position of Si3N4 along the N-Si line was incorrectly placed at 33% Si and actually belongs at 43% Si.]CrossRefGoogle Scholar
13. Kuiper, A.E.T., Ligt, G.C.J.van der, Wijgert, W.M.van de, Willemsen, M.F.C. and Habraken, F.H.P.M., J. Vac. Sci. Technol. B3, 830 (1985).Google Scholar
14. Miyoshi, Kazuhisa and Buckley, Donald H., Applications of Surf. Sci. 10, 357 (1982).CrossRefGoogle Scholar
15. Rudy, E., Ternary Phase Equilibria in Transition Metal-B-C-Si Systems, Part V, Technical Report AFML-TR−65−2 (Air Force Materials Lab, Wright- Patterson Air Force Base, OH, May 1969), p. 522.Google Scholar
16. Singer, I.L. and Wandass, J.H. (unpublished).Google Scholar