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Composition and Structure of as-Deposited and Oxidized Dcs-Based Cvd WsiX Films

Published online by Cambridge University Press:  25 February 2011

Mansour Moinpour ,
Farhad Moghadam ,
Johnny Cham  and
Wen-Juei Lu
Mansour Moinpour
Affiliation:
Intel Corporation, California Technology Development, Santa Clara, CA., 95052
Farhad Moghadam
Affiliation:
Intel Corporation, California Technology Development, Santa Clara, CA., 95052
Johnny Cham
Affiliation:
Intel Corporation, California Technology Development, Santa Clara, CA., 95052
Wen-Juei Lu
Affiliation:
Intel Corporation, California Technology Development, Santa Clara, CA., 95052
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Abstract

CVD WSix films have been widely employed for ultra thin gate and bit-line applications. Recently, for sub 0.5 μm technologies based on CVD WSix polycide gates and interconnects, efforts have been made to replace the silane-based deposition chemistry with that based on dichlorosilane (DCS) reduction of tungsten hexafluoride (WF6). Fluorine-contaminated gate oxides and poor film adhesion and cracking (especially after high temperature annealing/oxidation) are main characteristics of silane-based WSix which could be detrimental for fine geometries of sub 0.5 |im technologies. In this paper, the composition and structure of DCS-based CVD WSix films were studied. WSix films were deposited on 200 mm, implanted polysilicon substrates; silicide film thickness ranging from 60 to 200nm. A high temperature furnace anneal and oxidation cycle was used to examine post-oxidation film properties. SIMS, RBS and X-ray diffraction (XRD) were used to determine film composition profile, structure and texture on both as-deposited and annealed/oxidized films. Si/W uniformity through the depth of the film, for both W-rich and Si-rich interfaces, and its impact on film adhesion and cracking were studied. Also, WSix step coverage for sub 0.5 μm polycide topographies were examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 487
Copyright
Copyright © Materials Research Society 1995

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References

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