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Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

Published online by Cambridge University Press:  22 February 2011

J. Chan ,
T. Fu ,
N. W. Cheung ,
J. Ross ,
N. Newman  and
M. Rubin
J. Chan
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
T. Fu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
J. Ross
Affiliation:
Energy and Environment Division Lawrence Berkeley LaboratoryUniversity of California, Berkeley, CA 94720
N. Newman
Affiliation:
Energy and Environment Division Lawrence Berkeley LaboratoryUniversity of California, Berkeley, CA 94720
M. Rubin
Affiliation:
Energy and Environment Division Lawrence Berkeley LaboratoryUniversity of California, Berkeley, CA 94720
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Abstract

Crystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 435
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Yim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankove, J.I., Ettenburg, M., and Gilbert, S.L., J. Appl. Phys., vol.44, pp.292–294,1973.Google Scholar
[2] Mizuta, M., Fujieda, S., and Matsumoto, Y., Ext.Abstr.19th Conf. on Sol.St.Dev. and Matd., pp.135–136, 1987.Google Scholar
[3] Chan, J.S., Cheung, N.W., and Yu, K.M., Mat.Res.Soc.Symp.Proc., vol.268, pp.377–82,1992.Google Scholar
[4] Duffy, M.T., Wang, C.C., O'Clock, G.D. Jr., McFarlane, S.H. III, and Zanzucchi, P.J., J. Electr. Matl., vol.2, no.2, pp.359–374, 1973.Google Scholar
[5] Tummala, R., Microelectronics Packaging Handbook, edited by Tummala, R. and Rymaszewski, E. (Van Nostrand Reinhold, New York, 1989), pp. 493–494.Google Scholar
[6] Ho, K.L., Jensen, K.F., Hanson, S.A., Evans, J.F, Boyd, D.C., and Gladfelter, W.L., Mat.Res.Soc.Symp.Proc., vol.162, pp.605–610, 1990.Google Scholar
[7] Stedile, F.C., Baumvol, J.R.B., Schreiner, W.H., and Freire, F.L. Jr., J. Vac. Sci. Technol. A, vol.10(5), pp.3272–3275, 1992.Google Scholar
[8] Meng, W.J., Sell, J.A., and Waldo, R.A., J. Vac. Sci. Technol.A, vol.9, pp.2183–2186,1991.Google Scholar
[9] Yoshida, S., Misawa, S., and Gonda, S., J. Appl. Phys., vol.53, pp.6844–6847, 1982.Google Scholar
[10] Sitar, Z., Paisley, M.J., Yan, B., Ruan, J., Choyke, W.J., and Davis, R.F, J. Vac. Sci. Technol. B, vol.8, pp.316–321, 1990.Google Scholar
[11] Miyauchi, M., Ishikawa, Y., and Shibata, N., Jpn. J. Appl. Phys., vol.31, pp.L1714–20,1992.Google Scholar
[12] Aita, C.R., J. Appl. Phys., vol.53, pp.1807–11, 1982.Google Scholar
[13] MacChesney, J.B., Bridenbaugh, P.M. and O'Connor, P.B., Mater.Res.Bull., vol.5, p.783,1970.Google Scholar
[14] Newman, N., Ross, J. and Rubin, M., Appl.Phys.Lett., vol.62, pp.1242–1244.Google Scholar