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Cluster Size Distributions in Different Temperature Regimes: The System Ga on GaAs(001)

Published online by Cambridge University Press:  21 February 2011

Y. Ren ,
M. Zinke-Allmang ,
L. C. Feldman  and
W. Van Saarloos
Y. Ren
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada N6A 3K7
M. Zinke-Allmang
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada N6A 3K7
L. C. Feldman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J. 07974, U.S.A.
W. Van Saarloos
Affiliation:
Instituut - Lorentz, University of Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands
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Abstract

In this paper we discuss results for the clustering of Ga on GaAs(001). The dominant dynamic process which drives this system toward this three dimensional equilibrium changes from Ostwald ripening at low deposition rates to coalescence at higher deposition rates. The experimental data allow us to test several theoretical predictions for cluster size distributions based on a detailed study of the microscopic processes. These include, at higher deposition rates, the observation of local ripening effects and diffusion limited growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 255
Copyright
Copyright © Materials Research Society 1992

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References

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