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Chemical Vapor Deposition of SiC from Silacyclobutane and Methylsilane

Published online by Cambridge University Press:  22 February 2011

A. D. Johnson ,
J. Perrin ,
J. A. Mucha  and
D. E. Ibbotson
A. D. Johnson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Perrin
Affiliation:
CNRS Palaiseau, France
J. A. Mucha
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. E. Ibbotson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The kinetics of SiC deposition has been studied over the temperature range 650–1050 ° C using the single-source reagents silacyclobutane (SCB) and methylsi-lane (MeSiH3 ) whose decomposition supplies the isomeric film-forming precursors H2Si = CH2 and HSiCH3, respectively. Thermal decomposition has been monitored by mass spectrometry and the SiC thin films characterized by scattering spec-trometry (RBS & ERD), FTIR spectroscopy and X-ray diffraction. Deposition rates from the two are comparable, with activation energies of 41 kcal/mole and 53 kcal/mole for SCB and MeSiH3 decomposition, respectively. Silacyclobutane deposits C-rich material lower temperatures, while SiC deposited from MeSiH3 is Si-rich at all temperatures. A mechanism for SiC CVD is proposed that is consistent with the observed kinetics and products.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 451
Copyright
Copyright © Materials Research Society 1993

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References

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