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Chemical Vapor Deposition of Beta Silicon Carbide Epilayers Using the Single Source Precursor 1,2-Disilylethane

Published online by Cambridge University Press:  22 February 2011

J. D. Parsons ,
D. A. Roberts ,
J. G. Wu ,
A. K. Chadda ,
H-S. Chen  and
H. Hockenhull
J. D. Parsons
Affiliation:
Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute of Science and Technology, Beaverton, OR 97006
D. A. Roberts
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
J. G. Wu
Affiliation:
Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute of Science and Technology, Beaverton, OR 97006
A. K. Chadda
Affiliation:
Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute of Science and Technology, Beaverton, OR 97006
H-S. Chen
Affiliation:
Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute of Science and Technology, Beaverton, OR 97006
H. Hockenhull
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
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Abstract

A β-SiC epitaxial growth process, using 1,2-disilylethane (DES), was developed. DSE was selected because it contains an equal number of C and Si atoms and its reported decomposition characteristics suggest that C and Si could be obtained from it at approximately equal rates. Repeatable nucleation and epitaxial growth conditions, giving complete substrate coverage and controlled growth, were established by atmospheric pressure CVD, in an inverted-vertical reactor. A substrate temperature of 1290± 10°C was found to be optimum for β-SiC epilayer nucleation and growth. The maximum β-SiC epitaxial growth rate obtained was 10μms/hr. Undoped β-SiC epilayers were n-type (n≈1016 cm−3 ). DSE synthesis, CVD growth parameters, SiC deposition characteristics and β-SiC epitaxial film properties are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 463
Copyright
Copyright © Materials Research Society 1993

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