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Characterization of zinc oxide single crystals for epitaxial wafer applications

Published online by Cambridge University Press:  01 February 2011

Naoki Ohashi ,
Takeshi Ohgaki ,
Shigeaki Sugimura ,
Katsumi Maeda ,
Isao Sakaguchi ,
Haruki Ryoken ,
Ikuo Niikura ,
Mitsuru Sato  and
Hajime Haneda
Naoki Ohashi
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Takeshi Ohgaki
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Shigeaki Sugimura
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan Tokyo Denpa Co., Ltd. (TEW), 5–6–11, Chuo Ota-ku, Tokyo 143–0024, Japan
Katsumi Maeda
Affiliation:
Tokyo Denpa Co., Ltd. (TEW), 5–6–11, Chuo Ota-ku, Tokyo 143–0024, Japan
Isao Sakaguchi
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Haruki Ryoken
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278–0022 Japan
Ikuo Niikura
Affiliation:
Tokyo Denpa Co., Ltd. (TEW), 5–6–11, Chuo Ota-ku, Tokyo 143–0024, Japan
Mitsuru Sato
Affiliation:
Tokyo Denpa Co., Ltd. (TEW), 5–6–11, Chuo Ota-ku, Tokyo 143–0024, Japan
Hajime Haneda
Affiliation:
National Institute for Materials Science (NIMS), 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
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Abstract

Zinc oxide (ZnO) single crystals were grown by the hydrothermal method using lithium and potassium hydroxide as mineralizer and properties of the grown crystals were characterized from the viewpoints of epitaxial wafer applications. The growth sector dependence of impurity and defect concentrations were characterized by secondary ion mass spectroscopy and photoluminescence. As a result, it was clearly shown that defect and impurity distribution in the obtained crystal was anisotropic, and this anisotropy is affected by the choice of the seed crystal shape and growth direction. Annealing effect on flatness of the wafer surface was also examined, and it was found that high temperature annealing with flat single crystalline cover is appropriate for removal of scratch and formation of atomically flat surface. Moreover, we show the possible miss-evaluation of Hall coefficient of ZnO due to anisotropy in defects and impurities distributions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.40
Copyright
Copyright © Materials Research Society 2004

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References

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