Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-02-04T16:44:27.117Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of LPCVD of Silicon Nitride in a Rapid Thermal Processor

Published online by Cambridge University Press:  25 February 2011

F. Scott Johnson ,
Roderick M. Miller ,
Mehmet C. Öztüirk  and
Jimmie J. Wortman
F. Scott Johnson
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Roderick M. Miller
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Mehmet C. Öztüirk
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Jimmie J. Wortman
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Get access

Abstract

Low pressure chemical vapor deposition of silicon nitride has been studied using a cold-walled, lamp heated, rapid thermal processor. Films were deposited at low presure using both silane and dichlorosilane, diluted in hydrogen and argon carrier gasses. The dichlorosilane and ammonia reaction was found to be unsuitable for use in the cold-walled system. Rapid thermal chemical vapor depositions using silane and ammonia did not result in “bullseye” non-uniformities reported for low presure depositions in conventional hot-walled tube furnaces. Ammonia to silane ratios of 120:1 were found to result in stoichiometric silicon nitride films. Deposition rates are well suited for dielectricapplications. Electrical characteristics are comparable to those of films deposited using APCVD and LPCVD methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 345
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Topich, James A.. Materials processing for mnos non-volatile memories. Electrochemical Society:Silicon Nitride Insulating Films, 83–8 32–48, 1983.Google Scholar
[2] Peercy, P. S. and Stein, H. J.. Materials analysis of silicon nitride. The Electrochemical Society:Silicon Nitride Thin Insulating Films, 83–8 3–31, 1983.Google Scholar
[3] Sheets, R. E.. Temperature measurement and control in a rapid thermal processor. MRS Symposia Proceedings: Rapid Thermal Processing, 52:191–197, 1986.Google Scholar
[4] Pettibone, D. W., Suarez, J. R., and Gat, A.. The effect of thin dielectric films on the accuracy of temperature measurement. MRS Symposia Proceedings:Rapid Thermal Processing, 52:209–216, 1986.Google Scholar
[5] Duval, P.. High Vacuum Production in the Microelectronics Industry, Vol. 2. Elsevier Science Publishing, New York, 1988.Google Scholar
[6] Rosier, R. S.. Low pressure cvd production processes for poly, nitride and oxide. Solid State Technology, 4–77 63–70, 1977.Google Scholar
[7] Bailey, R. S. and Kapoor, V. J.. Variation in the stoichiometry of thin silicon dioxide and its correlation with memory traps. Journal of Vacuum Science and Technology, 20:484–487, 1982.Google Scholar
[8] Gyulai, J., Meyer, O., and Mayer, J. W.. Evaluation of silicon nitride layers of various composition by backscattering and channeling effect measurements. Journal of Applied Physics, 42–1 451–456, 1971.Google Scholar
[9] Voskoboynikov, V. V.. Structure, optical, and electrical properties of silicon rich silicon nitride films. Thin Solid Films, 32:339–342, 1976.Google Scholar
[10] Fujita, S. and Sasaki, A.. Dangling bonds in memory quality silicon nitride films. Journal of the ElectrochemicalSociety:Solid State Science and Technology, 132–2 398–402, 1985.Google Scholar
[11] Maes, H. E. and Remmerie, J.. Effects of annealing in different ambients on the hydrogen and charge distribution in cvd silicon nitride films. The Electrochemical Society:Silicon Nitride Thin Insulating Films, 83–8 73–87, 1983.Google Scholar
[12] Schaffer, P. S. and Swaroop, B.. Vapor phase growth and dc breakdown of silicon nitride films. Ceramic Abstracts, 49–5 536–538, 1970.Google Scholar
[13] Misawa, Y. and Yaga, H.. Electrical conduction of silicon nitride. Japanese Journal of Applied Physics, 15–6 1045–1049, 1976.Google Scholar
[14] Maes, H. E. and Heyns, G. L.. Influence of high temperature hydrogen anneal on memory characteristics of p-channel mnos transistors. Journal of Applied Physics, 51–5 2706–2713, 1980.Google Scholar