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Characterization of immobilized DNA on sulfur-passivated InAssurfaces

Published online by Cambridge University Press:  01 February 2011

EunKyung Cho ,
Pae Wu ,
Minhaz Ahmed ,
April Brown  and
T. F. Kuech
EunKyung Cho
Affiliation:
Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Dr., Madison, WI 53706, U.S.A.
Pae Wu
Affiliation:
Department of Electrical and Computer Engineering, Duke University
Minhaz Ahmed
Affiliation:
Department of Electrical and Computer Engineering, Duke University
April Brown
Affiliation:
Department of Electrical and Computer Engineering, Duke University
T. F. Kuech
Affiliation:
Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Dr., Madison, WI 53706, U.S.A.
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Abstract

The immobilization of DNA on passivated n-type InAs (100) surfaces has beenstudied using X-ray and ultraviolet photoelectron spectroscopy. The benefitsof sulfur passivation using ammonium sulfide solution ((NH4)2S) for DNA immobilization were examined. TheXPS/UPS data carried out on non-functionalized and functionalized surfacesdemonstrate that the DNA probes reacted with the sulfur-passivated InAssurface. The XPS data in combination with fluorescently-tagged DNA indicatethat the sulfur passivation process leads to a higher and more uniformattachment of DNA over the surface compared to non-sulfur-passivated InAssurfaces. The XPS data obtained immediately after sulfur passivation clearlyobserves In-S bonding, with little or no As-S. In addition, the XPS spectraof As 3d core-levels immediately after sulfur passivation shows that thereis a negligible amount of As-Ox, but the peak become considerableafter exposure to the aqueous DNA probe solution. The increase in As-Ox is likely due to the presence of non-sulfur bonded Asatoms present on the surface. The presence of sulfur on the surface doeslead to the high areal density of attached ssDNA. This system forms thebasis of a DNA sensing system. While chemically passivating the surfaceagainst oxidation and facilitating probe attachment, the changes in Fermilevel position were also monitored by UPS. UPS spectra show that the Fermilevel of a clean InAs surface is located ~0.6 eV above the valence bandmaximum. The changes in electronic states induced by sulfur passivation andthe pinning of EF are discussed.

Keywords

x-ray photoelectron spectroscopy (XPS)electrical propertiessurface chemistry

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