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Characterization of Gasb-Based Alloy Semiconductors

Published online by Cambridge University Press:  25 February 2011

H. Uekita ,
N. Kitamura ,
M. Ichimura ,
A. Usami  and
T. Wada
H. Uekita
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
N. Kitamura
Affiliation:
Suzuka College of Technology, Department of Electrical Engineering, Shiroko-cho, Suzuka 510-02, Japan
M. Ichimura
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
A. Usami
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

GaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 169
Copyright
Copyright © Materials Research Society 1991

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References

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